| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor which is provided with an organic semiconductor layer pattern structure which can protect already formed electrode wiring during a patterning process of the organic semiconductor layer. SOLUTION: The organic thin-film transistor comprises a gate electrode 113, a source electrode 111 and a drain electrode 112 which are insulated from the gate electrode 113; and an organic semiconductor layer 180 which is insulated from the gate electrode 113, and contacts the source electrode 111 and the drain electrode 112. The organic semiconductor layer 180 covers the source electrode 111 and the drain electrode 112. COPYRIGHT: (C)2007,JPO&INPIT
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