发明名称 METHOD FOR FORMING THIN FILM, AND THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a thin film, by which a uniform thin film having high performance can be efficiently formed even at ordinary temperature, and to provide the thin film obtained by the same. SOLUTION: The method for forming the thin film comprises imparting nanoparticle on a base material and subjecting the nanoparticle imparted on the base material to an atmospheric pressure plasma treatment. The atmospheric pressure plasma treatment is characterized by supplying a gas between opposing electrodes under atmospheric pressure or a pressure close to the atmospheric pressure, converting the gas into an excited gas by generating a high frequency electric field between the electrodes, and then exposing the nanoparticle imparted on the base material to the excited gas. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007182605(A) 申请公布日期 2007.07.19
申请号 JP20060001264 申请日期 2006.01.06
申请人 KONICA MINOLTA HOLDINGS INC 发明人 HIROSE TATSUYA;FUKUDA KAZUHIRO;OZAKI KOJI
分类号 C23C16/505;C08J7/06;H01L21/208;H01L21/28;H01L21/288;H01L21/316 主分类号 C23C16/505
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