发明名称 |
METHOD FOR FORMING THIN FILM, AND THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film, by which a uniform thin film having high performance can be efficiently formed even at ordinary temperature, and to provide the thin film obtained by the same. SOLUTION: The method for forming the thin film comprises imparting nanoparticle on a base material and subjecting the nanoparticle imparted on the base material to an atmospheric pressure plasma treatment. The atmospheric pressure plasma treatment is characterized by supplying a gas between opposing electrodes under atmospheric pressure or a pressure close to the atmospheric pressure, converting the gas into an excited gas by generating a high frequency electric field between the electrodes, and then exposing the nanoparticle imparted on the base material to the excited gas. COPYRIGHT: (C)2007,JPO&INPIT
|
申请公布号 |
JP2007182605(A) |
申请公布日期 |
2007.07.19 |
申请号 |
JP20060001264 |
申请日期 |
2006.01.06 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
HIROSE TATSUYA;FUKUDA KAZUHIRO;OZAKI KOJI |
分类号 |
C23C16/505;C08J7/06;H01L21/208;H01L21/28;H01L21/288;H01L21/316 |
主分类号 |
C23C16/505 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|