| 摘要 |
A wiring trench is formed in an interlayer insulating film partway in the depth direction of the interlayer insulating film. A via hole is formed extending from the bottom of the wiring trench to the bottom of the interlayer insulating film. A capacitor recess is formed reaching the bottom of the interlayer insulating film. A conductive member is embedded in the wiring trench and via hole. A capacitor is embedded in the capacitor recess, including a lower electrode, a capacitor dielectric film and an upper electrode. The lower electrode is made of the same material as that of the conductive member and disposed along the bottom and side surface of the capacitor recess. A concave portion is formed on an upper surface of the lower electrode, and the capacitor dielectric film covers an inner surface of the concave portion. The upper electrode is embedded in the concave portion.
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