| 摘要 |
A CMOS image sensor and a method for manufacturing the same are provided. The method includes: preparing a semiconductor substrate in which a device isolation region and an active region are defined; forming a gate pattern including a gate oxide layer and a gate electrode on the semiconductor substrate; implanting n-type impurity ions in a predetermined part of the active region of the semiconductor substrate to form a photodiode region; forming a spacer at a sidewall of the gate pattern; forming a p-type impurity region at a surface of the photodiode region; forming an epitaxial layer on the semiconductor substrate and the gate pattern except for on the device isolation region and the spacers by performing a selective epitaxial growth; and implanting n+ type ions in a transistor region of the semiconductor substrate below the epitaxial layer to form a source/drain region.
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