发明名称 High voltage tolerant bias circuit with low voltage transistors
摘要 A circuit ( 200 ) can include a bias protection circuit ( 204 ) and a reference circuit ( 202 ). A bias protection circuit ( 204 ) can generate an internal power supply voltage (Vsuppi) from a higher device power supply (Vcch) with low voltage transistors and no resistors. A lower internal power supply voltage (Vsuppi) can be provided by buffer transistors (M 5 and M 6 ) that are biased according to limit section ( 206 ) that generates a bias voltage (biasn 2 ) based on a threshold voltage drop and a feedback bias voltage (biasn 1 ) from reference circuit ( 202 ).
申请公布号 US2007164812(A1) 申请公布日期 2007.07.19
申请号 US20070653532 申请日期 2007.01.16
申请人 RAO T V CHANAKYA;KOTHANDARAMAN BADRINARAYANAN 发明人 RAO T.V. CHANAKYA;KOTHANDARAMAN BADRINARAYANAN
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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