发明名称 |
High voltage tolerant bias circuit with low voltage transistors |
摘要 |
A circuit ( 200 ) can include a bias protection circuit ( 204 ) and a reference circuit ( 202 ). A bias protection circuit ( 204 ) can generate an internal power supply voltage (Vsuppi) from a higher device power supply (Vcch) with low voltage transistors and no resistors. A lower internal power supply voltage (Vsuppi) can be provided by buffer transistors (M 5 and M 6 ) that are biased according to limit section ( 206 ) that generates a bias voltage (biasn 2 ) based on a threshold voltage drop and a feedback bias voltage (biasn 1 ) from reference circuit ( 202 ).
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申请公布号 |
US2007164812(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20070653532 |
申请日期 |
2007.01.16 |
申请人 |
RAO T V CHANAKYA;KOTHANDARAMAN BADRINARAYANAN |
发明人 |
RAO T.V. CHANAKYA;KOTHANDARAMAN BADRINARAYANAN |
分类号 |
G05F1/10 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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