| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a crystal semiconductor particle manufacturing method which crystallizes a semiconductor particle such as a polycrystal silicon stably and efficiently, and manufacturers a crystal silicon particle of high crystallinity at low cost; and to provide a photoelectric conversion device having good electric characteristics. <P>SOLUTION: This method carries a bedplate 102 with multiple semiconductor particles 101 mounted on a top surface into a furnace 201 to heat and melt the semiconductor particles 101, and then solidifies the melted semiconductor particles 101 upwards from the bedplate 102 to form the crystal semiconductor particles 101. The bedplate 102 has a surface roughness in which an average space "RSm" in the surface roughness of the top surface is smaller than a diameter of the semiconductor particle 101. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
