| 摘要 |
PROBLEM TO BE SOLVED: To provide an easy-to-fabricate semiconductor device in which low loss can be achieved while ensuring high breakdown voltage, and to provide a method of fabricating the semiconductor device. SOLUTION: An SBD 10 as a semiconductor device includes: a substrate 11 composed of semiconductor; an n-type layer 12 formed on the substrate 11; an anode electrode 14 arranged on the n-type layer 12; and a p-type region 13 connected with the anode electrode 14 and projecting to the n-type layer 12. In the boundary region to the n-type layer 12, the p-type region 13 includes a low impurity region 13A having a conductivity type closer to p-type than a high impurity region 13B in the p-type region 13 adjacent to the boundary region. COPYRIGHT: (C)2007,JPO&INPIT |
