发明名称 |
Method of Fabricating a Lateral Double-Diffused Mosfet |
摘要 |
A method of monolithically fabricating an LDMOS transistor with a fabrication process that is compatible with a sub-micron CMOS fabrication process. The specification further describes an LDMOS transistor. The LDMOS transistor is implemented in a first impurity region on a substrate. The LDMOS transistor has a source that includes a second impurity region. The second impurity region is implanted into the surface of the substrate within the first impurity region. Additionally, the LDMOS transistor has a drain that includes a third impurity region. The third impurity region is implanted into the surface of the substrate within the first impurity region. The third impurity region is spaced a predetermined distance away from a gate of the LDMOS transistor. The drain of the LDMOS transistor further includes a fourth impurity region within the third impurity region. The fourth impurity region provides an ohmic contact for the drain.
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申请公布号 |
US2007166896(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20070677724 |
申请日期 |
2007.02.22 |
申请人 |
VOLTERRA SEMICONDUCTOR CORPORATION |
发明人 |
YOU BUDONG;ZUNIGA MARCO A. |
分类号 |
H01L21/84;H01L21/336;H01L21/8238;H01L21/8249;H01L27/06;H01L27/092;H01L29/08;H01L29/732;H01L29/78 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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