发明名称 |
Ethcing method and system |
摘要 |
An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG. 1 ).
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申请公布号 |
US2007166844(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20050571600 |
申请日期 |
2005.06.23 |
申请人 |
MORIKAWA YASUHIRO;HAYASHI TOSHIO;SUU KOUKOU |
发明人 |
MORIKAWA YASUHIRO;HAYASHI TOSHIO;SUU KOUKOU |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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