| 摘要 |
A semiconductor process and apparatus fabricate a metal gate electrode by forming a first conductive layer ( 22 ) over a gate dielectric layer ( 11 ), forming a transition layer ( 32 ) over the first conductive layer using an atomic layer deposition process in which an amorphizing material is increasingly added as the transition layer is formed, forming a capping conductive layer ( 44 ) over the transition layer, and then selectively etching the capping conductive layer, transition layer, and first conductive layer, resulting in the formation of an etched gate stack ( 52 ). By forming the transition layer ( 32 ) with an atomic layer deposition process in which the amorphizing material (such as silicon, carbon, or nitrogen) is increasingly added, the transition layer ( 32 ) is constructed having a lower region (e.g., 31, 33 ) with a polycrystalline structure and an upper region (e.g., 37, 39 ) with an amorphous structure that blocks silicon diffusion.
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