| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the curvature of a base board generated when a semiconductor device having the base board is manufactured. <P>SOLUTION: A silicon substrate 4, a plurality of columnar electrodes 12 provided on the silicon substrate 4, and a semiconductor structure 2 having a sealing film 13 whose top surface is continuous with the columnar electrode 12's are arranged on a plurality of predetermined portions on a base board 1 of a size corresponding to a plurality of semiconductor devices. Lattice-shaped sheets 14a and 14b for forming an insulating layer comprising semi-cured resin are arranged on the base board 1 between the semiconductor structures 2. A lattice-shaped hard sheet 15 comprising a material which is the same as that of the base board 1 is arranged on it. Heating pressurization is carried out vertically. The insulating layer is formed on the base board 1 between the semiconductor structures 2. The hard sheet 15 is embedded in the top surface of the insulating layer. In this case, since the hard sheet 15 comprising the material which is the same as that of the base board 1 is arranged on the sheets 14a and 14b for forming the insulating layer, the curvature of the base board 1 can be reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT |
