| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electron beam exposure apparatus which can improve throughput and the accuracy of a formation pattern during partial batch exposure. <P>SOLUTION: The electron beam system is provided with an electron gun 101, a first mask 103 with a first opening to form an electron beam, a second mask 106 with a second opening to form an electron beam, a stencil mask 111 which is provided beneath the first and second masks 103 and 106 and has a plurality of simultaneous graphic openings to form an electron beam, a parallelizing lens 113 to make an electron beam transmitting the stencil mask 111 to be a nearly parallel beam, and a mask deflector 112 for deflection which deflects an electron beam transmitting the stencil mask 111. The reduction ratio of the stencil mask 111 onto a sample surface is set to 1/N1, and when the reduction ratio of the first mask 103 and the second mask 106 onto the sample surface is set to 1/N2, N2 may be larger than N1. <P>COPYRIGHT: (C)2007,JPO&INPIT |
