| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing device which can obtain a uniform polishing profile while keeping a high removal rate even in a CMP process in which a removal rate greatly depends on a temperature of a polishing surface. <P>SOLUTION: This polishing device polishes a polished face 9 of a substrate W by the relative movement between the polished face 9 and a polishing face 8 of a polishing table 1 by bringing the polished face 9 into contact with the polishing face 8. The polishing device has polishing face temperature control means 20 comprising a fluid blowing mechanism 30 blowing gas such as compression gas toward the polishing face 8, a thermography 40 measuring temperature distribution of the polishing face 8, and a controller 50. When the polished face 9 is polished, the polishing face temperature control means 20 control blow of the fluid by deciding a blowing flow rate, a temperature and a blowing position of the gas based on results measured by the thermography 40, and makes the polishing rate of the polished face 9 constant by making the polishing face 8 into a predetermined temperature distribution. <P>COPYRIGHT: (C)2007,JPO&INPIT |
