| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which transistor characteristics can be enhanced by suppressing generation of junction leakage current, and to provide its fabrication process. SOLUTION: The semiconductor device comprises: a trench 40 formed selectively in the surface portion of a semiconductor substrate 10; a sidewall insulating film 60 formed on the inner side face at the upper portion of the trench; insulating films 50 and 80 formed to fill the trench where the sidewall insulating film is formed; a gate electrode 140 formed on the semiconductor substrate through a gate insulating film 130 in an element region 100 isolated by the sidewall insulating film and the insulating film filling the trench; a gate electrode sidewall 160 formed on the side face of the gate electrode; and a source region and drain region 150 and 170 formed on the opposite sides of a channel region 230 located under the gate electrode contiguously to the trench. COPYRIGHT: (C)2007,JPO&INPIT
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