发明名称 NITRIDE-BASED LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a nitride-based light emitting element and a manufacturing method thereof. <P>SOLUTION: This nitride-based light emitting element comprises: an n-clad layer disposed on a single crystal wafer; a porous layer formed by subjecting the n-clad layer from the upper surface to a predetermined depth to surface treatment in a mixed gas atmosphere of HCl and NH<SB>3</SB>; and an activated layer and p-clad layer disposed on the porous layer in this order. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007184619(A) 申请公布日期 2007.07.19
申请号 JP20070000813 申请日期 2007.01.05
申请人 SAMSUNG CORNING CO LTD 发明人 PARK SUNG-SOO
分类号 H01L33/06;C23C16/02;C23C16/34;H01L21/205;H01L21/302;H01L33/16;H01L33/32 主分类号 H01L33/06
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