发明名称 FERROELECTRIC MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a ferroelectric memory free from read errors even if there are variations in ferroelectric capacitance or in reversed electric charges in the ferroelectric capacitor. SOLUTION: A reference voltage generator circuit 25 having resistors R1, R2 and R3 is formed at the post stage of pre-sense amplifiers 2, 3. Resistance values of those resistors R1, R2 and R3 are decided so that reference voltages REF, REFX outputted from the reference voltage generator circuit 25 reach values between the variation range of the potential of output terminals OUT0, OUT0X, OUT1 and OUT2 of the pre-sense amplifiers 2, 3, 12 and 13 when they have expected logical values "1", and the variation range when they have expected logical values "0". COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007184016(A) 申请公布日期 2007.07.19
申请号 JP20060000077 申请日期 2006.01.04
申请人 FUJITSU LTD 发明人 FUKUSHI ISAO
分类号 G11C11/22 主分类号 G11C11/22
代理机构 代理人
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