| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor transistor that solves the problems of narrow channel effect and where the performance is improved in a PMOS transistor and an NMOS transistor, particularly the performance of driving current. SOLUTION: The MOS transistor includes a channel with width of W0 and length of L0, an active region containing a source region and a drain region formed on both sides of the channel, a gate insulating film formed on the channel, a gate conductor that is formed on the gate insulating film and intersects with the active region, a first additional active region to be added to the source region and wider than the channel width W0, and a second additional active region to be added to the drain region and wider than the channel width W0. The driving current is 107.27% if a transistor structure having an additional active region is applied to an NMOS transistor, and the driving current is 103.31% if the structure is applied to a PMOS transistor. Thus, the driving current is improved over the entire NMOS and PMOS. COPYRIGHT: (C)2007,JPO&INPIT
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