| 摘要 |
A method of fabricating a transistor of a semiconductor device comprises forming first and second trenches for gates in a substrate; forming a liner layer on innerwalls of the first and second trenches; forming first and second epitaxial gate electrodes by performing an epitaxial growth on the first and second trenches comprising the liner layers therein; forming isolation structures in the substrate, wherein the isolation structures contact the first and second epitaxial gate electrodes, respectively; forming a gate insulation layer and a gate electrode over a region of the substrate between the first and second epitaxial gate electrodes; and forming source and drain regions in the substrate disposed in respective edge regions of the gate electrode and overlapping the gate electrode.
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