发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device improving a reliability on the mounting of the semiconductor device without damaging the number of conductive particles contributing to a conduction. <P>SOLUTION: The semiconductor device has an interlayer film 7 formed on the surface of a semiconductor chip so as to coat an electrode pad 1, a protective film 2 formed on the interlayer film 7, and an opening 3 formed to the interlayer film 7 on the electrode pad 1 and the projective film 2. The semiconductor device further has a metallic film 4 formed on the electrode pad 1 in the opening 3 and on the protective film 2, bump electrodes 5 extended towards sections just above the metallic film 4 and a substrate oppositely arranged to the surfaces of the bump electrodes 5 through an anisotropic conductive film. In the semiconductor device, the substrate and the bump electrodes 5 are connected electrically through the anisotropic conductive film containing the conductive particles 11. The interlayer film 7 is formed by flattening a surface with the formed protective film 2. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007184372(A) 申请公布日期 2007.07.19
申请号 JP20060000839 申请日期 2006.01.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUZUKI SATOSHI;UEHARA TAKASHI;MORINAGA MINORU
分类号 H01L21/60 主分类号 H01L21/60
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