METHOD OF FABRICATING HIGH CAPACITANCE THIN FILM CAPACITOR

摘要

PROBLEM TO BE SOLVED: To provide a high frequency thin film capacitor having a high capacitance. SOLUTION: A silicon nitride barrier layer 12 is deposited on a gallium arsenide substrate 11 to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress buffer layer 14 is deposited on the barrier layer. A first electrode 16 which includes a close-contact layer 18 and a second layer 20 is formed on the stress buffer layer. A substantially anhydrous alkoxycarboxylate liquid precursor is prepared, which is spun on the first electrode after performing solvent exchange processing immediately before use, dried at 400°C, and annealed at the temperature between 600°C and 850°C to form a ferroelectric 22 for a BST capacitor. A second electrode 24 is deposited on the ferroelectric and annealed. COPYRIGHT: (C)2007,JPO&INPIT