| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon direct bonding method for suppressing the generation of any void due to gases by forming trenches on the bonding surface of two silicon substrates, forming gas discharge outlets vertically connected to the trenches on the bonding surface, and smoothly ejecting gases generated during a thermal treatment process. SOLUTION: This silicon direct bonding method includes a step for preparing two silicon substrates 110 and 120 having corresponding bonding surfaces, a step for forming trenches 114 and 116 having a predetermined depth in at least one bonding surface of the two silicon substrates, a step for forming gas discharge outlets connected to the trenches on at least one of the two silicon substrates to vertically penetrate the bonding surface, a step for cleaning the two silicon substrates, a step for closely contacting the two silicon substrates to each other, and a step for thermally treating the two substrates to bond them to each other. COPYRIGHT: (C)2007,JPO&INPIT
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