| 摘要 |
PROBLEM TO BE SOLVED: To provide a shallow trench separating structure that a dielectric material is located in voids of a material filled in the trench, and a method for forming its shallow trench separating structure concerning a semiconductor substrate. SOLUTION: In the method for forming the shallow trench separating structure 84, those voids are formed in a wet cleaning process after forming the dielectric material 56 in the trench. A conformal silicon nitride layer is formed on the substrate and in the voids. After removing the silicon nitride layer, the voids are at least partially filled with a silicon nitride material. COPYRIGHT: (C)2007,JPO&INPIT |
