| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which is capable of obtaining good picked-up images. SOLUTION: The solid-state imaging element is equipped with a semiconductor substrate in which a light receiving region is demarcated, a well that is provided inside the semiconductor substrate, charge storage regions which are arranged in lines in the well of the light receiving region, vertical transfer channels which are formed along the charge storage regions arranged in lines in the well of the light receiving region, a shading film which is formed above the surface of the semiconductor substrate within a region that contains the light receiving region, and horizontal transfer channels which are formed in the well and connected to the ends of the vertical transfer channels. The light receiving region is composed of a first region where an opening is provided to the shading film located above the charge storage regions; a second region where no opening is provided to the shading film above the charge storage regions; and a third region which is demarcated between the first and second region in the direction of the lines of the charge storage regions, and where the well is not formed partially at least, and no opening is provided to the shading film above the charge storage regions. COPYRIGHT: (C)2007,JPO&INPIT
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