| 发明名称 |
MEMORY CELL COMPRISING A DIODE FABRICATED IN A LOW RESISTIVITY, PROGRAMMED STATE |
| 摘要 |
A memory device includes at least one diode memory cell. The diode is fabricated in a low resistivity, programmed state.
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| 申请公布号 |
US2007164388(A1) |
申请公布日期 |
2007.07.19 |
| 申请号 |
US20070693858 |
申请日期 |
2007.03.30 |
| 申请人 |
SANDISK 3D LLC |
发明人 |
KUMAR TANMAY;HERNER S. BRAD |
| 分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
| 代理机构 |
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代理人 |
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