| 摘要 |
Embodiments relate to semiconductor device and a method of forming an insulating layer with a low dielectric constant in a semiconductor device. The method may include forming a plurality of metal patterns on a semiconductor substrate, depositing a first insulating layer on the entire surface of the semiconductor substrate having the plurality of metal patterns, depositing an etch stop layer on the first insulating layer, depositing a second insulating layer on the etch stop layer, removing the second insulating layer until the etch stop layer formed above each of the plurality of metal patterns is exposed, etching the exposed etch stop layer, and depositing a third insulating layer on the entire surface of the semiconductor substrate.
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