发明名称 |
Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method |
摘要 |
The aim of the invention is to configure a photodetector ( 10 ) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evalation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component ( 20 ) is assigned to the chip face onto which the light preferably falls. Electronic circuit components ( 30 ) are arranged on the opposite chip face. Electrical connections ( 40 ) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.
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申请公布号 |
US2007164393(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20040596035 |
申请日期 |
2004.12.06 |
申请人 |
MELEXIS GMBH |
发明人 |
BACH KONRAD;HOELKE ALEXANDER;ECKOLDT UWE;EINBRODT WOLFGANG;STAHL KARL-ULRICH |
分类号 |
H01L29/00;H01L27/144;H01L31/02;H01L31/0224;H01L31/10 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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