发明名称 Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method
摘要 The aim of the invention is to configure a photodetector ( 10 ) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evalation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component ( 20 ) is assigned to the chip face onto which the light preferably falls. Electronic circuit components ( 30 ) are arranged on the opposite chip face. Electrical connections ( 40 ) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.
申请公布号 US2007164393(A1) 申请公布日期 2007.07.19
申请号 US20040596035 申请日期 2004.12.06
申请人 MELEXIS GMBH 发明人 BACH KONRAD;HOELKE ALEXANDER;ECKOLDT UWE;EINBRODT WOLFGANG;STAHL KARL-ULRICH
分类号 H01L29/00;H01L27/144;H01L31/02;H01L31/0224;H01L31/10 主分类号 H01L29/00
代理机构 代理人
主权项
地址