Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards,申请号KR20017001998-传众专利搜索

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发明名称	Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards
摘要
申请公布号	KR100740443(B1)	申请公布日期	2007.07.19
申请号	KR20017001998	申请日期	2001.02.16
申请人		发明人
分类号	H01L21/3065	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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