| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor device having a fin structure which comprises a step of etching a silicon substrate with a recess gate mask, and performing a selective etching process on a device isolation film having a double oxide film structure with a rapid oxide film etching speed and a slow oxide film etching speed to form the fin structure, thereby simplifying the process and maximizing a current driving operation. SOLUTION: The method for forming the semiconductor device having the fin structure includes the steps of (a) forming a device isolation film over a silicon substrate to define an active area, (b) etching the silicon substrate of a gate forming region of the active area to form a trench, (c) selectively etching the device isolation film of a trench boundary, (d) forming a gate oxide film over the entire surface of the resulting structure, (e) depositing an electrode material over the entire surface of the resulting structure to form a gate electrode by patterning, and (f) forming a gate spacer over a sidewall of the gate electrode. COPYRIGHT: (C)2007,JPO&INPIT
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