发明名称 |
Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same |
摘要 |
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
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申请公布号 |
US2007164316(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20070723769 |
申请日期 |
2007.03.22 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
OHBU ISAO;KUSANO CHUSHIRO;UMEMOTO YASUNARI;KUROKAWA ATSUSHI |
分类号 |
H01L21/331;H01L31/00;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L27/082;H01L29/73;H01L29/737;H01L29/861;H03F3/24 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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