| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which does not cause peeling of an upper conductor film that coats a silicide electrode, to provide a method of manufacturing the silicon carbide semiconductor device, to provide a junction between a transition metal silicide and a metal film in the silicon carbide semiconductor device, and to provide a method of manufacturing the junction between the transition metal silicide and the metal film in the silicon carbide semiconductor device. SOLUTION: The low-carbon silicide electrode is formed by coating an n-type SiC substrate 1 with a contact parent material such as Ni, forming a silicide electrode 52 by making the contact parent material and the n-type SiC substrate 1 react in solid phase, drawing off at least a part of the carbon formed inside the silicide electrode 52 to the outside of the electrode, and removing it. Accordingly, an upper conductor film 3 of the silicon carbide semiconductor device is coated on a low-carbon silicide electrode 52 in which the carbon content is lower than the silicon content in comparing the mol numbers. COPYRIGHT: (C)2007,JPO&INPIT |
