| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an EEPROM which can store three-valued information and make quick verification when writing without causing verification errors. <P>SOLUTION: The EEPROM has a memory cell array 1 where electrically rewritable memory alls are arranged in a matrix, and a memory cell has three memory states; a plurality of bit lines connected to the memory cell array connected to the memory cell array; a plurality of word lines connected to the memory cell array; and two or more data latch circuits each provided for each bit line and each composed of two or more binary data latch circuits to store n-valued write data in the corresponding memory cell in a combination of two or more sets of binary data and to store the n-valued read data read from the corresponding memory cell in a combination of two or more sets of binary data. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
