| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a diode exhibiting resistance to process variation, and to provide a diode connection thin film transistor (TFT). <P>SOLUTION: A printed or patterned structure (e.g. circuit) including a diode and a TFT, method of fabricating the same, and applications of the same for identification tags and sensors are disclosed. A printed structure including a complementary pair of diodes or a diode-connected TFT in series can stabilize the threshold voltage (V<SB>t</SB>) of a diode fabricated by using a print or laser lithography technology. A stability in forward voltage drop of a print or laser lithography diode can be established or enhanced by utilizing separation between the V<SB>t</SB>(V<SB>tn</SB>) of NMOS TFT and the V<SB>t</SB>(V<SB>tp</SB>) of PMOS TFT. A further application relates to a reference voltage generator, a voltage clamp circuit, a method of controling voltage in reference or differential signal transmission line, and RFID and EAS tag and sensor. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
