| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CMOS image sensor which can easily achieve color images by removing a color filter and adjusting the thickness of the backside of the wafer, and to provide its manufacturing method. <P>SOLUTION: The CMOS image sensor includes: a plurality of pixel regions formed under a front surface of a substrate, and having photodiodes separated from each other by a field oxide; a multi-layered metal wiring formed over the pixel regions of the front of the substrate; a bump connected to an uppermost metal wiring of the multi-layered metal wiring; a plurality of trenches formed in a backside of the substrate, wherein the trenches have different depths for each wavelength of light, and correspond to the respective pixel regions; and a glass covering the backside of the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
