| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase the conversion gain of a reading transistor at a unit cell having an amplifying function, to elevate a saturation output from a signal-charge detector, and to improve the S/N characteristics of an output in a CMOS image sensor. <P>SOLUTION: A solid-state image sensor has an image sensing region arranging the unit cells in a two-dimensional manner in a matrix shape on a semiconductor substrate. The solid-state image sensor has: a photo-diode 11 arranged in the unit cell 10 in a p-well 20 for conducting a photoelectric conversion and a signal-charge storage; the reading transistor 12 arranged in the vicinity of the photo-diode on the surface of the p-well for transferring the signal charges of the photo-diode to the signal-charge detector; and an amplifier transistor 13 for outputting a voltage signal by amplifying the signal charges transferred in an implantation region. The signal-charge detector is composed of the implantation region 25 implanting impurity ions to a part of a semiconductor region on the drain side of the reading transistor, and the implantation region is narrower than the semiconductor region on the drain side of the reading transistor. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
