| 摘要 |
In a production process for a semiconductor device employing an SiC semiconductor substrate ( 1 ), the SiC semiconductor substrate ( 1 ) is mounted on a susceptor ( 23 ), and a C heating member ( 3 ) of carbon is placed on a surface of the SiC semiconductor substrate ( 1 ). An annealing process is performed to form an impurity region in the surface of the SiC semiconductor substrate ( 1 ) by causing the susceptor ( 23 ) and the C heating member ( 3 ) to generate heat at high temperatures.
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