发明名称 |
Methods of Manufacturing A Semiconductor Device for Improving the Electrical Characteristics of A Dielectric Film |
摘要 |
A method of manufacturing a semiconductor device includes depositing a high-dielectric film on a semiconductor substrate and performing an oxygen plasma treatment on the high-dielectric film deposited on the semiconductor substrate. The method further includes forming an electrode on the oxygen-plasma treated high-dielectric film.
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申请公布号 |
US2007166931(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20060567971 |
申请日期 |
2006.12.07 |
申请人 |
PARK HONG-BAE;CHO HAG-JU;SHIN YU-GYUN;KANG SANG-BOM |
发明人 |
PARK HONG-BAE;CHO HAG-JU;SHIN YU-GYUN;KANG SANG-BOM |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
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代理人 |
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主权项 |
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地址 |
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