发明名称 Methods of Manufacturing A Semiconductor Device for Improving the Electrical Characteristics of A Dielectric Film
摘要 A method of manufacturing a semiconductor device includes depositing a high-dielectric film on a semiconductor substrate and performing an oxygen plasma treatment on the high-dielectric film deposited on the semiconductor substrate. The method further includes forming an electrode on the oxygen-plasma treated high-dielectric film.
申请公布号 US2007166931(A1) 申请公布日期 2007.07.19
申请号 US20060567971 申请日期 2006.12.07
申请人 PARK HONG-BAE;CHO HAG-JU;SHIN YU-GYUN;KANG SANG-BOM 发明人 PARK HONG-BAE;CHO HAG-JU;SHIN YU-GYUN;KANG SANG-BOM
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
主权项
地址
您可能感兴趣的专利