| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high frequency induction heating apparatus and a high frequency induction melting method which can rapidly melt a metal or semiconductor material supplied into a crucible. <P>SOLUTION: The crucible 3 of the high frequency induction heating apparatus 1 for heating and melting silicon in the crucible 3 for example, by generating magnetic field with a high frequency induction coil 4, has a bottom wall part 3a and a side wall part 3b, and is formed so that the wall thickness t1 of a thin side wall part 11 at the lower part of the side wall part 3b is thinner than the wall thickness t2 of a thick side wall part 12 at the upper part of the side wall part 3b. In this melting method using the high frequency induction heating apparatus 1, a part of molten silicon 2 is left in the crucible 3 when discharging the molten silicon 2 from the crucible 3, a solid silicon 2a is supplied into the crucible 3 where the molten silicon 2 remains, and the solid silicon 2a is melted by heat conduction from the crucible 3 and the molten silicon 2 generating heat by the magnetic field generated by the high frequency induction coil 4. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
