METHOD AND APPARATUS FOR PROVIDING AN INTEGRATED CIRCUIT HAVING P AND N DOPED GATES
摘要
A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations.
申请公布号
WO2007081880(A2)
申请公布日期
2007.07.19
申请号
WO2007US00407
申请日期
2007.01.05
申请人
MICRON TECHNOLOGY, INC.;MOULI, CHANDRA;PAREKH, KUNAL, R.
