| 摘要 |
<p>The present invention provides a method for depositing a ruthenium metal compound containing film on one or more substrates (101). The desired metal compound is first dissolved in a suitable solvent. The precursor mixture is then vaporized and delivered to a process chamber (100) to be used in the deposition of the metal compound on the substrates by process methods comprising CVD, MOCVD, ALD, and the like. This method results in the deposition of high quality, substantially uniform films, Additionally, the method makes efficient use of the metal compound component and reduces the cost for the deposition of the metal compound.</p> |
