发明名称 High voltage generation and regulation circuit in a memory device
摘要 An auxiliary voltage generation circuit is part of a high voltage generation and regulation circuit. The auxiliary voltage generation circuit generates an auxiliary intermediate voltage that is coupled to a negative level shifting circuit to reduce the drain-source stress experienced by transistors in that circuit that are in an off state. The auxiliary voltage generation circuit also generates a logic control signal that indicates to a high voltage discharge path to perform either a slow discharge operation or a fast discharge operation.
申请公布号 US7245538(B2) 申请公布日期 2007.07.17
申请号 US20050195904 申请日期 2005.08.03
申请人 发明人
分类号 G11C11/34;G11C5/00;G11C5/14;G11C8/00;G11C16/04;G11C16/30 主分类号 G11C11/34
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