发明名称 |
High voltage generation and regulation circuit in a memory device |
摘要 |
An auxiliary voltage generation circuit is part of a high voltage generation and regulation circuit. The auxiliary voltage generation circuit generates an auxiliary intermediate voltage that is coupled to a negative level shifting circuit to reduce the drain-source stress experienced by transistors in that circuit that are in an off state. The auxiliary voltage generation circuit also generates a logic control signal that indicates to a high voltage discharge path to perform either a slow discharge operation or a fast discharge operation.
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申请公布号 |
US7245538(B2) |
申请公布日期 |
2007.07.17 |
申请号 |
US20050195904 |
申请日期 |
2005.08.03 |
申请人 |
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发明人 |
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分类号 |
G11C11/34;G11C5/00;G11C5/14;G11C8/00;G11C16/04;G11C16/30 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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