发明名称 |
Process sequence and mask layout to reduce junction leakage for a dual gate MOSFET device |
摘要 |
A method of forming a thin gate insulator layer comprises forming an active region surrounded by STI regions; forming a first insulator layer on the active device region; forming a patterned photoresist layer over the first insulator layer and a at least a portion of the STI regions; etching the first insulator layer to expose a portion of the active device region, wherein the photoresist layer substantially protects the STI regions during etching; forming a thin gate insulator layer on the exposed portion of the active device region, wherein said first insulator layer located on a remaining portion of said active device region is converted to a thicker second insulator layer; and forming a conductive gate structure overlying a first portion of the thin gate insulator layer while a second portion of the thin gate insulator layer not covered by the conductive gate structure is removed.
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申请公布号 |
US7244641(B2) |
申请公布日期 |
2007.07.17 |
申请号 |
US20040874927 |
申请日期 |
2004.06.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHIN PIN-SHYNE |
分类号 |
H01L21/336;H01L21/28;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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