发明名称 Two-bit cell semiconductor memory device
摘要 A 2-bit cell is made up of first and second diffusion regions provided on a substrate surface, first and second storage nodes adjacent to the first and second diffusion region, first and second gate electrodes provided on first and second storage nodes, a third storage node provided on the substrate and a third gate electrode provided on the third storage node. The first and second gate electrodes are connected common to form word line electrodes. A control gate electrode at right angles to the word line electrodes and a third diffusion region in the substrate surface disposed at a longitudinal end of the control gate electrode are provided. A storage node, Node 1, of interest, with the control gate channel as a drain, is read without the intermediary of the second node, which is not of interest, such that reading of Node 1 unaffected by the second node.
申请公布号 US7244986(B2) 申请公布日期 2007.07.17
申请号 US20040931901 申请日期 2004.09.01
申请人 NEC ELECTRONICS CORPORATION 发明人 NISHIZAKA TEIICHIRO
分类号 H01L29/792;G11C16/04;G11C16/10;G11C16/16;G11C16/26;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788 主分类号 H01L29/792
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