| 发明名称 |
Double gate field effect transistor with diamond film |
| 摘要 |
A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous as a heat spreader.
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| 申请公布号 |
US7244963(B2) |
申请公布日期 |
2007.07.17 |
| 申请号 |
US20050123299 |
申请日期 |
2005.05.06 |
| 申请人 |
INTEL CORPORATION |
发明人 |
RAVI KRAMADHATI V. |
| 分类号 |
H01L27/108;H01L21/336;H01L21/84;H01L27/12;H01L29/04;H01L29/49;H01L29/786 |
主分类号 |
H01L27/108 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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