Semiconductor devices and method for manufacturing the same

摘要

In a field effect transistor, an Si layer 11 , an SiC (Si_1-yC_y) channel layer 12 , a CN gate insulating film 13 made of a carbon nitride layer (CN) and a gate electrode 14 are deposited in this order on an Si substrate 10 . The thickness of the SiC channel layer 12 is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region 15 and a drain region 16 are formed on opposite sides of the SiC channel layer 12 , and a source electrode 17 and a drain electrode 18 are provided on the source region 15 and the drain region 16 , respectively.