发明名称 Semiconductor memory device and method of production
摘要 Final sections of the word lines are arranged in a staggered fashion to fan out and have larger lateral extensions than the word lines. Interspaces are filled with a dielectric material, and a mask is applied that partially covers the final sections and leaves contact areas in regions adjacent to the final sections and to the interspaces open. This mask is used to remove the dielectric material between the word line stacks. A second word line layer is applied and planarized to form second word lines between the first word lines, which have contact areas arranged in a staggered fashion to fan out like the final sections of the first word lines.
申请公布号 US7244638(B2) 申请公布日期 2007.07.17
申请号 US20050241820 申请日期 2005.09.30
申请人 INFINEON TECHNOLOGIES AG 发明人 CASPARY DIRK;PARASCANDOLA STEFANO
分类号 H01L21/82 主分类号 H01L21/82
代理机构 代理人
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