发明名称 Power detector for use in a nonvolatile memory device and method thereof
摘要 A nonvolatile memory cell operates without a time delay in an external power mode using an external power source. A power detector includes high voltage generators for generating voltages to a target level in response to a high voltage enable signal. A high voltage level detector detects attainment of the generated voltages to their respective target levels in response to an internal power mode signal generated in an internal power mode, and outputs a first detection signal. An external power mode detector outputs a second detection signal for an operation of the nonvolatile memory cell in response to an external power mode signal generated in an external power mode, and outputs the second detection signal in response to the first detection signal in the internal power mode.
申请公布号 US7245547(B2) 申请公布日期 2007.07.17
申请号 US20040919965 申请日期 2004.08.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM MYONG-JAC;CHO JI-HO
分类号 G11C5/14;G11C16/06;G11C11/34;G11C16/02;G11C16/30;G11C29/00;G11C29/12 主分类号 G11C5/14
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