SILICON OXIDE ETCHING SOLUTION AND METHOD OF FORMING CONTACT HOLE USING THE SAME

摘要

Provided are a silicon oxide etching solution, which is able to etch silicon oxide easily while minimizing damage to metal silicide, and a method of forming a contact hole using the etching solution, which prevents damage to the metal silicide. The silicon oxide etching solution is applied to a process for enlarging the width of a contact hole(30) formed on an oxide film(20) covering a metal silicide pattern, and comprises 0.01-2wt% of ammonium bifluoride, 2-35wt% of an organic acid, 0.05-1wt% of an inorganic acid, and an excess of a low polar organic solvent. The silicone oxide film(20) includes a BPSG oxide film(22) and a high density plasma silicon oxide film(24). The silicon oxide etching solution has an etching selectivity for the high density plasma oxide film(24) and the BPSG oxide film(22) of 1:1.2-2.5.