SEMICONDUCTOR DEVICES HAVING GATE CONTACT STRUCTURE CAPABLE OF REDUCING INTERFACIAL RESISTANCE AND METHODS OF FABRICATING THE SAME

摘要

A semiconductor device having a gate contact structure and a fabricating method thereof are provided to reduce interfacial resistance between a polycrystal silicon layer and a metal nitride layer by directly connecting a gate contact plug with the polycrystal silicon layer. A polycrystal silicon layer(131) is formed on a semiconductor substrate(100), and is used as a gate electrode of a transistor. An intermediate conductive layer(132) and an upper metal layer(133) are deposited on the polycrystal silicon layer, and have an opening penetrating the upper metal layer and the intermediate conductive layer to expose the polycrystal silicon layer. A contact plug filling the opening is directly connected to the polycrystal silicon layer through the opening.