发明名称 |
VERFAHREN ZUR SILIZIUMEINLAGERUNG IN CVD- METALLFILME |
摘要 |
<p>A semiconductor device including a silicon-based substrate with recessed features and a tantalum barrier film having at least about 5% silicon incorporated substantially uniformly throughout the film. The device may further include a tantalum barrier film having improved conformality and decreased halogen impurity content. A method for incorporating the silicon into the tantalum barrier layer includes depositing tantalum by PECVD and interrupting deposition at least once to treat the deposited tantalum with a silane containing plasma.</p> |
申请公布号 |
AT364898(T) |
申请公布日期 |
2007.07.15 |
申请号 |
AT20010993191T |
申请日期 |
2001.10.31 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HILLMAN, JOSEPH;CALIENDO, STEVEN |
分类号 |
H01L21/00;C23C16/06;C23C16/08;C23C16/44;C23C16/455;C23C16/56;H01L21/285;H01L21/768;H01L23/532 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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