| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a heat radiation structure of a semiconductor device that copes with thinning and is capable of obtaining high radiation effect. <P>SOLUTION: The radiation structure of the semiconductor device is provided with a first region 220 on which the semiconductor device 100 is mounted, a substrate having a second region 230 enclosing the first region on its surface, a first surface 101, and a second surface 102 facing the first surface, has the semiconductor device where a plurality of terminals are formed on the first surface. The semiconductor device is mounted on a substrate so as to allow the first surface to face the surface of the substrate. A first radiation film is formed so as to expose the first on the surface of the substrate, and to cover the second region, and a second radiation film formed so as to be spaced out from the first radiation film on the second surface of the semiconductor device. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
